UPA2826T1S-E2-AT, MOSFETs POWER TRANSISTOR MOS-IC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063994259
- Артикул
- UPA2826T1S-E2-AT
- Бренд
- Renesas Technology
- Brand:
- Renesas Electronics
- Fall Time:
- 120 ns
- Rise Time:
- 94 ns
- Вес, г
- 1
Цена по запросу
(от 312,62 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Renesas Electronics |
| Fall Time: | 120 ns |
| Rise Time: | 94 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Renesas Electronics |
| Package/Case: | HWSON-8 |
| Product Type: | MOSFETs |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 37 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 1.5 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 50 ns |
| Typical Turn-Off Delay Time: | 120 ns |
| Id - Continuous Drain Current: | 27 A |
| Maximum Operating Temperature: | +150 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance: | 4.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |