TTC3710B,S4X, Bipolar Transistors - BJT Bipolar Transistors Silicn NPN Epitaxial
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- Код товара
- 8067823910
- Артикул
- TTC3710B,S4X
- Бренд
- Toshiba
- Brand:
- Toshiba
- Packaging:
- Tube
- Вес, г
- 2
- Technology:
- Si
Цена по запросу
(от 830 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Packaging: | Tube |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Toshiba |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation: | 30 W |
| DC Current Gain hFE Max: | 240 V |
| Gain Bandwidth Product fT: | 80 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 15 A |
| Maximum DC Collector Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 160 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |