TSM650P03CX RFG, Транзистор P-МОП, полевой, 30В 4,1A 1,56Вт 0,065Ом SOT23
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- Код товара
- 8062308507
- Артикул
- TSM650P03CX RFG
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Fall Time:
- 12.4 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 19.4 ns
Цена по запросу
(от 23 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, 30В 4,1A 1,56Вт 0,065Ом SOT23
Технические параметры
| Brand: | Taiwan Semiconductor |
| Fall Time: | 12.4 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 19.4 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Taiwan Semiconductor |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | TSM650P03CX |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1.56 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 5.4 ns |
| Typical Turn-Off Delay Time: | 45.9 ns |
| Id - Continuous Drain Current: | 4.1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 55 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |