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TSM3457CX6 RFG, MOSFETs -30V, -5A, Single P-Channel Power MOSFET

TSM3457CX6 RFG, MOSFETs -30V, -5A, Single P-Channel Power MOSFET

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Код товара
8062484843
Артикул
TSM3457CX6 RFG
Бренд
Taiwan Semiconductor
PPAP
No
Brand:
Taiwan Semiconductor
EU RoHS
Compliant
Mounting
Surface Mount
Цена по запросу
(от 79,94 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

PPAPNo
Brand:Taiwan Semiconductor
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Fall Time:3.87 ns
Packaging:Reel, Cut Tape
Rise Time:2.33 ns
Вес, г0.02
PCB changed6
Part StatusActive
Technology:Si
Channel ModeEnhancement
Channel TypeP
Subcategory:MOSFETs
Channel Mode:Enhancement
ConfigurationSingle Quad Drain
Manufacturer:Taiwan Semiconductor
Package Width1.6
Product Type:MOSFET
Configuration:Single
Package Length2.9
Mounting Style:SMD/SMT
Package / Case:SOT-26-6
Part # Aliases:TSM3457CX6
Product CategoryPower MOSFET
Supplier PackageSOT-26
Transistor Type:1 P-Channel
Maximum IDSS (uA)1
Product Category:MOSFET
Qg - Gate Charge:9.52 nC
Process TechnologyTrenchFET
Moisture Sensitive:Yes
Number of Channels:1 Channel
Transistor Polarity:P-Channel
Standard Package NameSOT
Typical Fall Time (ns)3.87
Typical Rise Time (ns)2.33
Pd - Power Dissipation:2 W
Vgs - Gate-Source Voltage:-20 V, +20 V
Number of Elements per Chip1
Typical Turn-On Delay Time:10.8 ns
Typical Turn-Off Delay Time:22.53 ns
Id - Continuous Drain Current:5 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)2000
Minimum Operating Temperature:-55 C
Typical Gate Charge @ 10V (nC)9.52
Typical Gate Charge @ Vgs (nC)9.52@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10.8
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22.53
Rds On - Drain-Source Resistance:82 mOhms
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)551.57@15V
Vds - Drain-Source Breakdown Voltage:30 V
Maximum Drain Source Resistance (MOhm)60@10V
Vgs th - Gate-Source Threshold Voltage:1 V
Maximum Gate Source Leakage Current (nA)100
Factory Pack Quantity: Factory Pack Quantity:3000

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