TSM2NB60CH C5G, N-Channel 600 V 2A (Tc) 44W (Tc) Through Hole TO-251 (IPAK)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063943030
- Артикул
- TSM2NB60CH C5G
- Бренд
- Taiwan Semiconductor
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 147,37 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 2.3A с 3-контактным разъемом (3+ язычка) на трубке TO-251
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.5(Max) |
| Package Length | 6.7(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-251 |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 9.6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 60000 |
| Typical Gate Charge @ 10V (nC) | 9.9 |
| Typical Gate Charge @ Vgs (nC) | 9.9@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 7.3 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.3 |
| Typical Input Capacitance @ Vds (pF) | 316@25V |
| Maximum Drain Source Resistance (mOhm) | 4400@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |