TSM280NB06LCR RLG, Транзистор: N-MOSFET, полевой, 60В, 7А, 19Вт, PDFN56
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066860757
- Артикул
- TSM280NB06LCR RLG
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Fall Time:
- 18 ns
- Rise Time:
- 19 ns
- Вес, г
- 0.01
Цена по запросу
(от 58 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 60В, 7А, 19Вт, PDFN56
Технические параметры
| Brand: | Taiwan Semiconductor |
| Fall Time: | 18 ns |
| Rise Time: | 19 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Taiwan Semiconductor |
| Package/Case: | PDFN-56-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | TSM280NB06LCR |
| Transistor Type: | Single N-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 56 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 1 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current: | 28 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 31 S |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |