TSM260P02CX6 RFG, SOT26
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- Код товара
- 8062484845
- Артикул
- TSM260P02CX6 RFG
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Fall Time:
- 24.6 ns
- Rise Time:
- 37.5 ns
- Вес, г
- 0.1
Цена по запросу
(от 38 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Taiwan Semiconductor |
| Fall Time: | 24.6 ns |
| Rise Time: | 37.5 ns |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Taiwan Semiconductor |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-26-6 |
| Part # Aliases: | TSM260P02CX6 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 19.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1.56 W |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 10.4 ns |
| Typical Turn-Off Delay Time: | 89.1 ns |
| Id - Continuous Drain Current: | 6.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 21 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 300 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |