TSM150P03PQ33 RGG, P-Channel 30 V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3.1x3.1)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063939832
- Артикул
- TSM150P03PQ33 RGG
- Бренд
- Taiwan Semiconductor
- PPAP
- No
- SVHC
- Yes
- Military
- No
- Mounting
- Surface Mount
Цена по запросу
(от 51 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET P-CH 30V 10A 8-контактный P-DFN EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Military | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.1 |
| Package Length | 3.1 |
| Product Category | Power MOSFET |
| Supplier Package | P-DFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 14.4 |
| Typical Rise Time (ns) | 21.8 |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Maximum Power Dissipation (mW) | 2300 |
| Typical Gate Charge @ 10V (nC) | 29.3 |
| Typical Gate Charge @ Vgs (nC) | 14.3@4.5V|29.3@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Power Dissipation - (mW) | 23000 |
| Typical Gate Charge @ Vgs - (nC) | 14.6@4.5V |
| Typical Turn-Off Delay Time (ns) | 59.8 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 36 |
| Maximum Gate Threshold Voltage - (V) | 2.5 |
| Typical Input Capacitance @ Vds (pF) | 1829@15V |
| Maximum Continuous Drain Current - (A) | 30 |
| Maximum Drain-Source Resistance (mOhm) | 15@10V |
| Typical Input Capacitance @ Vds - (pF) | 1730@15V |
| Maximum Drain Source Resistance - (mOhm) | 15@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |