TSM085P03CV RGG, MOSFETs -30, -64, Single P-Channel
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066093709
- Артикул
- TSM085P03CV RGG
- Бренд
- Taiwan Semiconductor
- FET Type
- P-Channel
- Military
- No
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 58 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET P-CH 30V 14A 8-контактный PDFN EP T/R
Технические параметры
| FET Type | P-Channel |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Vgs (Max) | ±20V |
| Automotive | No |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.31 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Package | PDFN EP |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 14A, 10V |
| Power Dissipation (Max) | 50W(Tc) |
| Supplier Device Package | 8-PDFN(3.1x3.1) |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Operating Temperature - (??C) | -55~150 |
| Drain to Source Voltage (Vdss) | 30 V |
| Maximum Power Dissipation - (mW) | 2400 |
| Typical Gate Charge @ 10V - (nC) | 55 |
| Typical Gate Charge @ Vgs - (nC) | 27@4.5VI55@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 30 |
| Input Capacitance (Ciss) (Max) @ Vds | 3234 pF @ 15 V |
| Maximum Gate Threshold Voltage - (V) | 2.5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Continuous Drain Current - (A) | 14 |
| Typical Input Capacitance @ Vds - (pF) | 3234@15V |
| Current - Continuous Drain (Id) @ 25°C | 64A(Tc) |
| Maximum Drain Source Resistance - (mOhm) | 8.5@10V |