TSM085P03CS RLG, Транзистор: P-MOSFET
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- Код товара
- 8062501730
- Артикул
- TSM085P03CS RLG
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Fall Time:
- 33 ns
- Rise Time:
- 2.6 ns
- Вес, г
- 0.1
Цена по запросу
(от 66 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Taiwan Semiconductor |
| Fall Time: | 33 ns |
| Rise Time: | 2.6 ns |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Taiwan Semiconductor |
| Package/Case: | SOP-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | TSM085P03CS |
| Transistor Type: | P-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 56 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 14 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.2 ns |
| Typical Turn-Off Delay Time: | 68 ns |
| Id - Continuous Drain Current: | 34 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 35 S |
| Rds On - Drain-Source Resistance: | 7.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |