TSM080N03EPQ56 RLG, MOSFETs 30V, 55A, Single N-Channel Power MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005523295
- Артикул
- TSM080N03EPQ56 RLG
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Fall Time:
- 8.2 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 12.5 ns
Цена по запросу
(от 84,36 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Taiwan Semiconductor |
| Fall Time: | 8.2 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 12.5 ns |
| Вес, г | 0.37 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Taiwan Semiconductor |
| Package/Case: | PDFN-56-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | TSM080N03EPQ56 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 7.5 nC |
| Структура | N-Channel |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Особенности | - |
| Pd - Power Dissipation: | 54 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 4.8 ns |
| Typical Turn-Off Delay Time: | 27.6 ns |
| Id - Continuous Drain Current: | 55 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 55 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |