Транзисторы полевые (FETs, MOSFETs) STN4NF20L
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8003673130
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series
- STN
- Series:
- STN4NF20L
- Pin Count
- 4
Цена по запросу
(от 106 ₽)
Минимальный заказ: 11 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 200В 1A
Технические параметры
| Brand: | STMicroelectronics |
| Series | STN |
| Series: | STN4NF20L |
| Pin Count | 4 |
| Fall Time: | 10.4 ns |
| Rise Time: | 2 ns |
| Tradename: | STripFET |
| Вес, г | 0.39 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 900 pC |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 3.3 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200 V |
| Id - Continuous Drain Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance: | 1.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Крутизна характеристики, S | - |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |