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Транзисторы полевые (FETs, MOSFETs) STL36DN6F7

Транзисторы полевые (FETs, MOSFETs) STL36DN6F7

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Код товара
8003874409
Бренд
STMicroelectronics
Brand:
STMicroelectronics
Military
No
Packaging
Tape and Reel
Pin Count
8
Цена по запросу
(от 182 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор MOSFET N-CH 60V 33A с 8-контактным разъемом питания EP T/R

Технические параметры

Brand:STMicroelectronics
MilitaryNo
PackagingTape and Reel
Pin Count8
AutomotiveNo
Fall Time:3.95 ns, 3.95 ns
Rise Time:3.25 ns, 3.25 ns
Вес, г0.08
Technology:Si
Channel ModeEnhancement
Channel TypeN
Subcategory:Transistors
Channel Mode:Enhancement
Manufacturer:STMicroelectronics
Product Type:MOSFETs
Configuration:Dual
Mounting Style:SMD/SMT
Package / Case:PowerFLAT-5x6-8
Supplier PackagePower Flat EP
Transistor Type:2 N-Channel
Product Category:MOSFETs
Qg - Gate Charge:8 nC
Process TechnologySTripFET F7
Number of Channels:2 Channel
Transistor Polarity:N-Channel
Factory Pack Quantity:3000
Pd - Power Dissipation:58 W
Vgs - Gate-Source Voltage:-20 V, +20 V
Number of Elements per Chip2
Typical Turn-On Delay Time:7.85 ns, 7.85 ns
Operating Temperature - (?C)-55~150
Typical Turn-Off Delay Time:12.1 ns, 12.1 ns
Id - Continuous Drain Current:33 A
Maximum Operating Temperature:+175 C
Minimum Operating Temperature:-55 C
Maximum Power Dissipation - (mW)58000
Typical Gate Charge @ 10V - (nC)8
Typical Gate Charge @ Vgs - (nC)8@10V
Maximum Gate Source Voltage - (V)?20
Rds On - Drain-Source Resistance:23 mOhms, 23 mOhms
Maximum Drain Source Voltage - (V)60
Maximum Gate Threshold Voltage - (V)4
Vds - Drain-Source Breakdown Voltage:60 V
Maximum Continuous Drain Current - (A)33
Typical Input Capacitance @ Vds - (pF)420@30V
Vgs th - Gate-Source Threshold Voltage:2 V
Maximum Drain Source Resistance - (mOhm)27@10V

Техническая документация