Транзисторы полевые (FETs, MOSFETs) STD95N2LH5
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8023500792
- Бренд
- STMicroelectronics
- RoHS
- Details
- Brand
- STMicroelectronics
- Width
- 6.2 mm
- Brand:
- STMicroelectronics
Цена по запросу
(от 40 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
транз: N-MOSFET 25V 80A <0.006Om
Технические параметры
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 6.2 mm |
| Brand: | STMicroelectronics |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Series | N-channel STripFET |
| Series: | STD95N2LH5 |
| Fall Time | 7 ns |
| Packaging | Reel |
| Rise Time | 38 ns |
| Fall Time: | 7 ns |
| Rise Time: | 38 ns |
| Technology | Si |
| Tradename: | STripFET |
| Вес, г | 0.62 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | STMicroelectronics |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13.4 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 70 W |
| Особенности | - |
| Pd - Power Dissipation: | 70 W |
| Vgs - Gate-Source Voltage | 22 V |
| Typical Turn-On Delay Time | 7 ns |
| Vgs - Gate-Source Voltage: | -22 V, +22 V |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current | 80 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 4.5 mOhms |
| Rds On - Drain-Source Resistance: | 4.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |