Транзисторы полевые (FETs, MOSFETs) STD7NM80
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070507317
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RDS-on
- 1050@10V mOhm
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 230 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 800В, 6,5А, 90Вт, DPAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| RDS-on | 1050@10V mOhm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| Lead Finish | Matte Tin |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Typical Fall Time | 10 ns |
| Typical Rise Time | 8 ns |
| Process Technology | MDmesh |
| Max Processing Temp | 260I300 |
| Operating Temperature | -55 to 150 °C |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 8 |
| Typical Turn-On Delay Time | 20 ns |
| Температура, С | -55…+150 |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 35 ns |
| Maximum Drain Source Voltage | 800 V |
| Maximum Power Dissipation (mW) | 90000 |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Continuous Drain Current | 6.5 A |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 620@25V |
| Maximum Drain Source Resistance (mOhm) | 1050@10V |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Транспортная упаковка: размер/кол-во | 58*46*37/2500 |