Транзисторы полевые (FETs, MOSFETs) STD7ANM60N
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070618517
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- Unknown
- SVHC
- Yes
- Brand:
- STMicroelectronics
Цена по запросу
(от 130 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, AEC-Q101, N-CH, 600 В, 5 А, 45 Вт; Полярность транзистора: N-канальный; Постоянный ток стока Id:5 А; Напряжение источника стока Vds: 600 В; Сопротивление включения Rds(on): 0,8 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:3В; Р
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Brand: | STMicroelectronics |
| RDS-on | 900@10V mOhm |
| EU RoHS | Compliant with Exemption |
| Package | 3D2PAK |
| Mounting | Surface Mount |
| Rad Hard | No |
| ECCN (US) | EAR99 |
| Packaging | Tape & Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 12 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 10 ns |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package Width | 6.2(Max) |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package Length | 6.6(Max) |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| EDA / CAD Models | STD7ANM60N by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 14 nC |
| Typical Fall Time | 12 ns |
| Typical Rise Time | 10 ns |
| Process Technology | MDmesh |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55 to 150 ?C |
| Standard Package Name | TO-252 |
| Factory Pack Quantity: | 2500 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 10 |
| Pd - Power Dissipation: | 45 W |
| Supplier Temperature Grade | Automotive |
| Typical Turn-On Delay Time | 7 ns |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | ?25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 26 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 45000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 14 |
| Typical Gate Charge @ Vgs (nC) | 14@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 363@50V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Drain Source Resistance (mOhm) | 900@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |