Транзисторы полевые (FETs, MOSFETs) STD5N52K3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8858278376
- Бренд
- STMicroelectronics
- Case
- DPAK
- Brand:
- STMicroelectronics
- Series
- SuperMESH3в(ў
- Series:
- STD5N52K3
Цена по запросу
(от 120 ₽)
Минимальный заказ: 6 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 525В 70Вт
Технические параметры
| Case | DPAK |
| Brand: | STMicroelectronics |
| Series | SuperMESH3в(ў |
| Series: | STD5N52K3 |
| Version | ESD |
| FET Type | N-Channel |
| Mounting | SMD |
| Packaging | Digi-ReelВ® |
| Vgs (Max) | В±30V |
| Fall Time: | 16 ns |
| Rise Time: | 11 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | MDmesh |
| Вес, г | 0.4 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | STMicroelectronics |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | DPAK |
| Channel Mode: | Enhancement |
| Drain current | 2.77A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Kind of channel | enhancement |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Standard Package | 1 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 70W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 4.5V @ 50ВµA |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 1.5Ω |
| Drain-source voltage | 525V |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.2A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 70 W |
| Power Dissipation (Max) | 70W(Tc) |
| Supplier Device Package | DPAK |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 9 ns |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Typical Turn-Off Delay Time: | 29 ns |
| Drain to Source Voltage (Vdss) | 525V |
| Id - Continuous Drain Current: | 4.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 545pF @ 100V |
| Vds - Drain-Source Breakdown Voltage: | 525 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Current - Continuous Drain (Id) @ 25В°C | 4.4A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | - |
| Максимальная рассеиваемая мощность Pси макс..Вт | 70 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |