Транзисторы полевые (FETs, MOSFETs) STD35NF06T4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070494897
- Бренд
- STMicroelectronics
- Type:
- MOSFET
- Width
- 6.2mm
- Brand:
- STMicroelectronics
- Series
- STripFET
Цена по запросу
(от 100,11 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 60В 35A 80Вт 0,02Ом TO252 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Type: | MOSFET |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | STripFET |
| Series: | STD35NF06 |
| Pin Count | 3 |
| Fall Time: | 15 ns |
| Rise Time: | 8 ns |
| Tradename: | STripFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 55 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 80 W |
| Typical Gate Charge @ Vgs | 44.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 36 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 35 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 13 S |
| Maximum Drain Source Resistance | 20 mΩ |
| Maximum Continuous Drain Current | 35 A |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |