Транзисторы полевые (FETs, MOSFETs) STD16NF06LT4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070581988
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 6.2mm
Цена по запросу
(от 163 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N, TO-252; Полярность транзистора: N-канальный; Постоянный ток стока Id: 24 А; Напряжение источника стока Vds: 60 В; Сопротивление включения Rds (вкл.): 0,07 Ом; Испытательное напряжение Rds (вкл.) Vgs:10 В; Пороговое напряжение Vgs:1 В; Рассеиваемая мощность Pd
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Series | STripFET |
| EU RoHS | Compliant with Exemption |
| Series: | STD16NF06L |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 30 ns |
| Вес, г | 2 |
| PCB changed | 2 |
| Part Status | Unconfirmed |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.5 nC |
| Process Technology | STripFET II |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 30 |
| Особенности | - |
| Pd - Power Dissipation: | 40 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 40 W |
| Typical Gate Charge @ Vgs | 7.5 nC @ 5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -18 V, +18 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 24 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 40000 |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 7.5@5V |
| Forward Transconductance - Min: | 12 S |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Gate Source Voltage (V) | ±18 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 24 |
| Typical Input Capacitance @ Vds (pF) | 370@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 70@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |