Транзисторы полевые (FETs, MOSFETs) STD130N4F6AG
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072378848
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- STD130N4F6AG
- Fall Time:
- 19.5 ns
- Rise Time:
- 62.5 ns
Цена по запросу
(от 190,63 ₽)
Минимальный заказ: 22 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Series: | STD130N4F6AG |
| Fall Time: | 19.5 ns |
| Rise Time: | 62.5 ns |
| Tradename: | STripFET |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 143 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 19.5 ns |
| Typical Turn-Off Delay Time: | 58 ns |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |