Транзисторы полевые (FETs, MOSFETs) STD11NM50N
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8749490975
- Бренд
- STMicroelectronics
- RoHS
- Details
- Type
- Power Mosfet
- Brand
- STMicroelectronics
- Type:
- Power MOSFET
Цена по запросу
(от 102 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 500В 8.5А 0.4 Ом, 70Вт
Технические параметры
| RoHS | Details |
| Type | Power Mosfet |
| Brand | STMicroelectronics |
| Type: | Power MOSFET |
| Brand: | STMicroelectronics |
| Series | N-channel MDmesh |
| Series: | STD11NM50N |
| Fall Time | 10 ns |
| Packaging | Reel |
| Rise Time | 10 ns |
| Fall Time: | 10 ns |
| Rise Time: | 10 ns |
| Technology | Si |
| Tradename: | MDmesh |
| Вес, г | 0.6 |
| Technology: | Si |
| Unit Weight | 0.139332 oz |
| Manufacturer | STMicroelectronics |
| Subcategory: | MOSFETs |
| Корпус | DPAK |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 19 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 70 W |
| Особенности | - |
| Pd - Power Dissipation: | 70 W |
| Vgs - Gate-Source Voltage | +/-25 V |
| Typical Turn-On Delay Time | 8 ns |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 33 ns |
| Id - Continuous Drain Current | 8.5 A |
| Maximum Operating Temperature | +150 C |
| Id - Continuous Drain Current: | 8.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 470 mOhms |
| Rds On - Drain-Source Resistance: | 470 mOhms |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | -25 V, +25 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±25В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 470mΩ |