Транзисторы полевые (FETs, MOSFETs) RF4E070BNTR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8069823100
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Fall Time:
- 5 ns
- Rise Time:
- 8 ns
- Вес, г
- 1
Цена по запросу
(от 113,52 ₽)
Минимальный заказ: 32 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | ROHM Semiconductor |
| Fall Time: | 5 ns |
| Rise Time: | 8 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-2020-8 |
| Part # Aliases: | RF4E070BN |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 8.9 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4 S |
| Rds On - Drain-Source Resistance: | 28.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |