Транзисторы полевые (FETs, MOSFETs) PMPB20ENZ
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8067092501
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Fall Time:
- 8 ns
- Rise Time:
- 17 ns
- Вес, г
- 0.82
Цена по запросу
(от 16 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Nexperia |
| Fall Time: | 8 ns |
| Rise Time: | 17 ns |
| Вес, г | 0.82 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Package/Case: | DFN-2020MD-6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934066626184 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 10.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 12.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 9 ns |
| Id - Continuous Drain Current: | 10.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8 S |
| Rds On - Drain-Source Resistance: | 16.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |