Транзисторы полевые (FETs, MOSFETs) IXTA10P50PTRL
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8068383351
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 44 ns
- Rise Time:
- 28 ns
- Вес, г
- 1
Цена по запросу
(от 836 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 44 ns |
| Rise Time: | 28 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3(TO-263-3) |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 50 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 800 |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 52 ns |
| Id - Continuous Drain Current: | 10 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 6.5 S |
| Rds On - Drain-Source Resistance: | 1 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |