Транзисторы полевые (FETs, MOSFETs) IRFPG50PBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8682596568
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 5.31mm
- Brand:
- Vishay Semiconductors
- Series:
- IRFPG
- Pin Count
- 3
Цена по запросу
(от 502 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 1000В 6.1А 190Вт, 2.0 Ом
Технические параметры
| Width | 5.31mm |
| Brand: | Vishay Semiconductors |
| Series: | IRFPG |
| Pin Count | 3 |
| Fall Time: | 36 ns |
| Packaging: | Tube |
| Rise Time: | 35 ns |
| Вес, г | 7.5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| Корпус | TO-247AC |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 190 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 190 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 190 W |
| Typical Gate Charge @ Vgs | 190 nC 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 19 ns |
| Maximum Drain Source Voltage | 1000 V |
| Typical Turn-Off Delay Time: | 130 ns |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 6.1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 5.4 S |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Continuous Drain Current | 6.1 A |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Крутизна характеристики, S | 5.4 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |