Транзисторы полевые (FETs, MOSFETs) IRF7201TRPBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8859320180
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 4mm
- Brand:
- Infineon Technologies
- Series
- HEXFET
- Pin Count
- 8
Цена по запросу
(от 122,84 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 30В 7.3А 2.5Вт
Технические параметры
| Width | 4mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| Pin Count | 8 |
| Fall Time: | 19 ns |
| Rise Time: | 35 ns |
| Вес, г | 0.15 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Корпус | SO-8 |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 2.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 21 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7.3 A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 5.8 S |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Continuous Drain Current | 7.3 A |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Крутизна характеристики, S | 5.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |