Транзисторы полевые (FETs, MOSFETs) FDS9400A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073598211
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- Power MOSFET
- Mounting
- Surface Mount
- Polarity
- P
Цена по запросу
(от 107,25 ₽)
Минимальный заказ: 400 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МАЛОСИГНАЛЬНЫЙ ПОЛЕВОЙ ТРАНЗИСТОР, 3,4 А I(D), 30 В, 1-ЭЛЕМЕНТНЫЙ, P-КАНАЛ, КРЕМНИЙ, МЕТАЛЛ-ОКСИДНЫЙ ПОЛУПРОВОДНИКОВЫЙ ПОЛЕВОЙ ТРАНЗИСТОР
Технические параметры
| PPAP | No |
| Type | Power MOSFET |
| Mounting | Surface Mount |
| Polarity | P |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOIC |
| Rad Hardened | No |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Power Dissipation | 2.5(W) |
| Number of Elements | 1 |
| Process Technology | TMOS |
| Drain-Source On-Volt | 30(V) |
| Operating Temp Range | -55C to 175C |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 12.5 |
| Continuous Drain Current | 3.4(A) |
| Gate-Source Voltage (Max) | '±25(V) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 2.4@5V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.4 |
| Operating Temperature Classification | Military |
| Typical Input Capacitance @ Vds (pF) | 205@15V |
| Maximum Drain Source Resistance (MOhm) | 130@10V |