Транзисторы полевые (FETs, MOSFETs) FDPC8014S
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070620431
- Бренд
- ON Semiconductor***
- HTS
- FDPC8014S
- PPAP
- No
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 270 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | FDPC8014S |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6.25(Max) |
| Package Height | 0.75(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Power 56 EP |
| Maximum IDSS (uA) | 500@Q 2|1@Q 1 |
| Process Technology | TrenchFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4@Q 2|2@Q 1 |
| Typical Rise Time (ns) | 6@Q 2|2@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2300@Q 2|2100@Q 1 |
| Typical Gate Charge @ 10V (nC) | 93@Q 2|25@Q 1 |
| Typical Gate Charge @ Vgs (nC) | 43@4.5V@Q 2|93@10V|11@4.5V@Q 1|25@10V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 16@Q 2|8@Q 1 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 47@Q 2|24@Q 1 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 41@Q 2|20@Q 1 |
| Typical Input Capacitance @ Vds (pF) | 6580@13V@Q 2|1695@13V@Q 1 |
| Maximum Drain Source Resistance (MOhm) | 1.2@10V@Q 2|3.8@10V@Q 1 |
| Maximum Gate Source Leakage Current (nA) | 100 |