Транзисторы полевые (FETs, MOSFETs) FDMC8030
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- Код товара
- 8025946989
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
- Width
- 3 mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 259,50 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, ДВОЙНОЙ N-КАНАЛЬНЫЙ, 40 В, 12 А, МОЩНОСТЬ 33-8; Полярность транзистора: Двуxканальный N-канальный; Постоянный ток стока Id: 12 А; Напряжение источника стока Vds: 40 В; Сопротивление включения Rds(on): 0,008 Ом; Тестовое напряжение Rds(on) Vgs: 10 В; Пороговое напряжение
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 3 mm |
| Brand: | onsemi/Fairchild |
| Height | 0.8 mm |
| Length | 3 mm |
| Series | FDMC8030 |
| Series: | FDMC8030 |
| Packaging | Cut Tape |
| Pin Count | 8 |
| Tradename | PowerTrench |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 0.06 |
| Technology: | Si |
| Unit Weight | 0.006914 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | Power 33 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | Power-33-8 |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-33-8 |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 12 nC, 21 nC |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12 nC, 21 nC |
| Number of Channels | 2 Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 800 mW |
| Особенности | - |
| Pd - Power Dissipation: | 800 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 1.9 W |
| Typical Gate Charge @ Vgs | 12 nC @ 5 V, 21 nC @ 10 V |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 40 V |
| Id - Continuous Drain Current | 12 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 28 mΩ |
| Maximum Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |