Транзисторы полевые (FETs, MOSFETs) DMC3016LSD
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- Код товара
- 8001940291
- Бренд
- DIODES INC.
- RoHS
- Details
- Brand
- Diodes Incorporated
- Series
- DMC3016
- Fall Time
- 5.6 ns, 40.4 ns
Цена по запросу
(от 50,92 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet, двойной, N/P-Ch, 30 В, 8,2А, соответствует требованиям Rohs: Да |Diodes Inc. DMC3016LSD-13
Технические параметры
| RoHS | Details |
| Brand | Diodes Incorporated |
| Series | DMC3016 |
| Fall Time | 5.6 ns, 40.4 ns |
| Packaging | Reel |
| Rise Time | 16.5 ns, 17.1 ns |
| Technology | Si |
| Вес, г | 0.129 |
| Channel Mode | Enhancement |
| Manufacturer | Diodes Incorporated |
| Configuration | 1 N-Channel, 1 P-Channel |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 11.3 nC, 10.9 nC |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 1.2 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 4.8 ns, 9.7 ns |
| Typical Turn-Off Delay Time | 26.1 ns, 60.5 ns |
| Id - Continuous Drain Current | 8.2 A, 6.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Rds On - Drain-Source Resistance | 15 mOhms, 30 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |