Транзисторы полевые (FETs, MOSFETs) CSD25501F3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004232607
- Бренд
- Texas Instruments
- Brand:
- Texas Instruments
- Series
- FemtoFETв(ў
- Series:
- CSD25501F3
- FET Type
- P-Channel
Цена по запросу
(от 12,44 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET -20 В, P-канальный МОП-транзистор NexFET, одиночный LGA 0,6 мм x 0,7 мм, 76 Мом, защита затвора от электростатического разряда 3-PICOSTAR - от55 до 150
Технические параметры
| Brand: | Texas Instruments |
| Series | FemtoFETв(ў |
| Series: | CSD25501F3 |
| FET Type | P-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | -20V |
| Fall Time: | 945 ns |
| Rise Time: | 428 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.0003 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Texas Instruments |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Package/Case: | PICOSTAR-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 3-XFLGA |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.02 nC |
| Vgs(th) (Max) @ Id | 1.05V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 400mA, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Power Dissipation (Max) | 500mW(Ta) |
| Supplier Device Package | 3-LGA(0.73x0.64) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 474 ns |
| Gate Charge (Qg) (Max) @ Vgs | 1.33nC @ 4.5V |
| Typical Turn-Off Delay Time: | 1154 ns |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 3.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3.4 S |
| Rds On - Drain-Source Resistance: | 260 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 385pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1.05 V |
| Current - Continuous Drain (Id) @ 25В°C | 3.6A(Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |