Транзисторы полевые (FETs, MOSFETs) CSD25483F4
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- Код товара
- 8003874377
- Бренд
- Texas Instruments
- RoHS
- Details
- Brand
- Texas Instruments
- Width
- 0.64 mm
- Brand:
- Texas Instruments
Цена по запросу
(от 15,45 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
-20 В, P-канальный МОП-транзистор NexFET™, одиночный LGA 0,6 мм x 1 мм, 245 Мом, защита затвора от электростатического разряда 3-PICOSTAR от -55 до 150
Технические параметры
| RoHS | Details |
| Brand | Texas Instruments |
| Width | 0.64 mm |
| Brand: | Texas Instruments |
| Height | 0.35 mm |
| Length | 1 mm |
| Series | CSD25483F4 |
| Series: | CSD25483F4 |
| Fall Time | 7 ns |
| Packaging | Cut Tape |
| Rise Time | 3.7 ns |
| Fall Time: | 7 ns |
| Rise Time: | 3.7 ns |
| Technology | Si |
| Tradename: | NexFET |
| Вес, г | 1 |
| Technology: | Si |
| Manufacturer | Texas Instruments |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | Picostar-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | PICOSTAR-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 960 pC |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 960 pC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 250 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage | -12 V |
| Typical Turn-On Delay Time | 4.3 ns |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-Off Delay Time | 17.4 ns |
| Typical Turn-On Delay Time: | 4.3 ns |
| Typical Turn-Off Delay Time: | 17.4 ns |
| Id - Continuous Drain Current | -1.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 1.4 S |
| Id - Continuous Drain Current: | 1.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.4 S |
| Rds On - Drain-Source Resistance | 1.07 Ohms |
| Rds On - Drain-Source Resistance: | 1.07 Ohms |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage | -950 mV |
| Vgs th - Gate-Source Threshold Voltage: | 950 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 9000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |