Транзисторы полевые (FETs, MOSFETs) BSS138W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062812632
- Бренд
- ON Semiconductor***
- Width
- 1.25mm
- Brand:
- onsemi/Fairchild
- Series
- -
- Series:
- BSS138W
Цена по запросу
(от 14 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой N-канальный 50В 0,21A SOT323
Технические параметры
| Width | 1.25mm |
| Brand: | onsemi/Fairchild |
| Series | - |
| Series: | BSS138W |
| FET Type | N-Channel |
| Packaging | Cut Tape(CT) |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-323 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SC-70, SOT-323 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Base Part Number | BSS138 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.1 nC |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.4V |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
| Pd - Power Dissipation: | 200 mW |
| Power Dissipation (Max) | 340mW(Ta) |
| Supplier Device Package | SC-70(SOT323) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 340 mW |
| Typical Gate Charge @ Vgs | 1.1 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 10V |
| Maximum Drain Source Voltage | 50 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 50V |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 6 Ω |
| Maximum Continuous Drain Current | 210 mA |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 38pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Current - Continuous Drain (Id) @ 25В°C | 210mA(Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |