Транзисторы полевые (FETs, MOSFETs) BS170FTA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8052882897
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.4mm
- EU RoHS
- Compliant
- Version
- N channel
Цена по запросу
(от 59 ₽)
Минимальный заказ: 158 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 60В, 0,15мА, 0,33Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Version | N channel |
| Assembly | SMD |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Enclosure | TO-236 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | ±20V |
| Automotive | No |
| Lead Shape | Gull-wing |
| Power loss | 330 mW |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Max. current | 0.15 mA |
| Package Type | SOT-23 |
| max. Voltage | 60 V |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Process Technology | DMOS |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Transistor Material | Si |
| Operating Temperature | -55°C ~ 155°C(TJ) |
| Standard Package Name | SOT |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| Power Dissipation (Max) | 330mW(Ta) |
| Supplier Device Package | SOT-23-3 |
| Gate Charge Qg @10V (nC) | 3x10<sup>-9</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 330 mW |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation (mW) | 330 |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Maximum Continuous Drain Current | 150 mA |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 10(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 10 V |
| Maximum Continuous Drain Current (A) | 0.00015 |
| Typical Input Capacitance @ Vds (pF) | 60@10V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 5000@10V |
| Current - Continuous Drain (Id) @ 25°C | 150µA(Ta) |