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Транзисторы полевые (FETs, MOSFETs) 2N7002K-T1-E3

Транзисторы полевые (FETs, MOSFETs) 2N7002K-T1-E3

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Код товара
8068683036
Бренд
VISHAY INTERTECHNOLOGY INC.
PPAP
No
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
EAR99
Цена по запросу
(от 11 ₽)
Минимальный заказ: 710 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор N-MOSFET, полевой, 60В, 0,19А, 0,14Вт, SOT23

Технические параметры

PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г1
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Typical Gate Charge @ 10V (nC)0.4
Typical Gate Charge @ Vgs (nC)0.4 4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)6
Typical Turn-On Delay Time (ns)25(Max)
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.1
Typical Turn-Off Delay Time (ns)35(Max)
Maximum Diode Forward Voltage (V)1.3
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)30 25V
Maximum Drain Source Resistance (mOhm)2000 10V
Maximum Gate Source Leakage Current (nA)150
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.8
Maximum Power Dissipation on PCB @ TC=25°C (W)0.35
Typical Reverse Transfer Capacitance @ Vds (pF)2.5 25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)350

Техническая документация