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Транзисторы биполярные (BJTs) TIP102

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Код товара
8070618230
Бренд
STMicroelectronics
Case
TO220AB
RoHS
Details
Brand
STMicroelectronics
Width
4.6 mm
Цена по запросу
(от 136,58 ₽)
Минимальный заказ: 3864 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: NPN, биполярный, Дарлингтон, 100В, 15А, 80Вт, TO220AB Характеристики Категория Транзистор Тип биполярный Вид NPN

Технические параметры

CaseTO220AB
RoHSDetails
BrandSTMicroelectronics
Width4.6 mm
Height9.15 mm
Length10.4 mm
SeriesDarlingtons
MountingTHT
PackagingTube
Pin Count3
Вес, г0.82
Power - Max2 W
Unit Weight0.211644 oz
ManufacturerSTMicroelectronics
Package TypeTO-220
Polarisationbipolar
ConfigurationSingle
Mounting TypeThrough Hole
Mounting StyleThrough Hole
Package / CaseTO-220-3
Kind of packagetube
Transistor TypeNPN
Product CategoryDarlington Transistors
Collector current15A
Power dissipation80W
Kind of transistorDarlington
Type of transistorNPN
Transistor PolarityNPN
Factory Pack Quantity1000
Operating Temperature150°C(TJ)
Minimum DC Current Gain200
Supplier Device PackageTO-220
Transistor ConfigurationSingle
Collector-emitter voltage100V
Emitter- Base Voltage VEBO5 V
Number of Elements per Chip1
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current8 A
Maximum Emitter Base Voltage5 V
Maximum Operating Temperature+150 C
Minimum Operating Temperature-65 °C
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
Current - Collector (Ic) (Max)8 A
DC Collector/Base Gain hfe Min200
Maximum Collector Base Voltage100 V
Current - Collector Cutoff (Max)50µA
Maximum Collector Cut-off Current50 uA
Maximum Collector Emitter Voltage100 V
Collector- Emitter Voltage VCEO Max100 V
Maximum Continuous Collector Current8 A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Voltage - Collector Emitter Breakdown (Max)100 V
Maximum Collector Emitter Saturation Voltage2.5 V

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