Транзисторы биполярные (BJTs) MMBTH81
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8564890390
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- RF Bipolar Small Signal
- Brand
- ON Semiconductor/Fairchild
- Type:
- RF Bipolar Small Signal
Цена по запросу
(от 17 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор PNP -20 -50мА 225мВт Кус не менее 60 не менее 600МГц
Технические параметры
| RoHS | Details |
| Type | RF Bipolar Small Signal |
| Brand | ON Semiconductor/Fairchild |
| Type: | RF Bipolar Small Signal |
| Width | 1.3 mm |
| Brand: | onsemi/Fairchild |
| Height | 0.93 mm |
| Length | 2.92 mm |
| Series | MMBTH81 |
| Series: | MMBTH81 |
| Packaging | Reel |
| Pin Count | 3 |
| Technology | Si |
| Вес, г | 0.05 |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236)| SOT-23 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | RF Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23 |
| Part # Aliases | MMBTH81_NL |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | MMBTH81_NL |
| Transistor Type | Bipolar |
| Product Category | RF Bipolar Transistors |
| Transistor Type: | Bipolar |
| Product Category: | RF Bipolar Transistors |
| Структура | pnp |
| Operating Frequency | 600 MHz |
| Transistor Polarity | PNP |
| Operating Frequency: | 600 MHz |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 225 mW |
| DC Current Gain hFE Max | 60 at 5 mA at 10 V |
| Pd - Power Dissipation: | 225 mW |
| DC Current Gain hFE Max: | 60 at 5 mA at 10 V |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 600 MHz(Min) |
| Maximum Power Dissipation | 225 mW |
| Emitter- Base Voltage VEBO | 3 V |
| Gain Bandwidth Product fT: | 600 MHz(Min) |
| Emitter- Base Voltage VEBO: | 3 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 20 V |
| Continuous Collector Current | 0.05 A |
| Maximum DC Collector Current | 0.05 A |
| Maximum Emitter Base Voltage | 3 V |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | 50 mA |
| Maximum DC Collector Current: | 50 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 60 |
| Maximum Collector Base Voltage | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 60 |
| Maximum Collector Emitter Voltage | 20 V |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальная рассеиваемая мощность ,Вт | 0.225 |
| Максимально допустимый ток к ( Iк макс.А) | 0.05 |
| Статический коэффициент передачи тока h21э мин | 60 |
| Граничная частота коэффициента передачи тока fгр.МГц | 600 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 20 |
| Макс. напр. к-б при заданном обратном токе к и разомкнутой цепи э.(Uкбо макс),В | 20 |