Транзисторы биполярные (BJTs) MMBTH10LT1G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8003100925
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
- Material
- Si
Цена по запросу
(от 9,09 ₽)
Минимальный заказ: 35 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор NPN 25В 50мА 225мВт Кус не менее 60 не менее 650МГц
Технические параметры
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.31 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | SOT-23 |
| Корпус | SOT-23-3(TO-236) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 60 4mA 10V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 225 mW |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 4 mA |
| Maximum Emitter Base Voltage | 3 V |
| Maximum Operating Temperature | +150 °C |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Collector Base Voltage | 30 V dc |
| Maximum Power Dissipation (mW) | 300 |
| Typical Output Capacitance (pF) | 0.7(Max) |
| Maximum Emitter Base Voltage (V) | 3 |
| Maximum Collector Emitter Voltage | 25 V |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 800(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage (V) | 25 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage Range (V) | 20 to 30 |
| Maximum Junction Ambient Thermal Resistance | 556 C/W |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5 0.4mA 4mA |