Транзисторы биполярные (BJTs) MJE13007
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015563581
- Бренд
- ON Semiconductor***
- Version
- NPN
- Assembly
- THT
- Category
- Bipolar Power
- Mounting
- Through Hole
Цена по запросу
(от 260 ₽)
Минимальный заказ: 9 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 400 В, 8 А, 80 Вт
Технические параметры
| Version | NPN |
| Assembly | THT |
| Category | Bipolar Power |
| Mounting | Through Hole |
| Enclosure | TO-220 |
| Frequency | 14(MHz) |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Вес, г | 2 |
| Min DC gain | 8 mA |
| Output Power | Not Required(W) |
| Package Type | TO-220AB |
| Rad Hardened | No |
| Configuration | Single |
| Mounting Type | Through Hole |
| DC Current Gain | 8@2A@5V/5@5A@5V |
| Frequency (Max) | 14 MHz |
| Transistor Type | NPN |
| Collector current | 8 A |
| Power Dissipation | 80(W) |
| Number of Elements | 1 |
| Transistor Polarity | NPN |
| Emitter-Base Voltage | 9(V) |
| Max DC amplification | 40 mA |
| Operating Temp Range | -65C to 150C |
| DC Current Gain (Min) | 8 |
| Collector Current (DC) | 8(A) |
| Minimum DC Current Gain | 5 |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 400(V) |
| Maximum Power Dissipation | 80 W |
| max. operating temperature | 150 °C |
| min. operating temperature | -65 °C |
| Maximum Operating Frequency | 1 MHz |
| Number of Elements per Chip | 1 |
| Collector Current (DC) (Max) | 8 A |
| Maximum DC Collector Current | 8 A |
| Maximum Emitter Base Voltage | 9 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 700 V |
| Maximum Collector Emitter Voltage | 400 V |
| Operating Temperature Classification | Military |
| max.voltage between collector and emitter Vceo | 400 V |