Транзисторы биполярные (BJTs) MC1413BDR2G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8189693324
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Width
- 4mm
- EU RoHS
- Compliant
Цена по запросу
(от 48,39 ₽)
Минимальный заказ: 9 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Сборка 7NPN транзисторов Дарлингтона 50В 0.5A 16SO
Технические параметры
| PPAP | No |
| Type | NPN |
| Width | 4mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.64 |
| PCB changed | 16 |
| Part Status | Active |
| Package Type | SOIC |
| Корпус | SO-16 |
| Configuration | Array 7 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Supplier Package | SOIC |
| Standard Package Name | SO |
| Minimum DC Current Gain | 1000@350mA@2V |
| Maximum Base Current (A) | 0.025 |
| Transistor Configuration | Common Emitter |
| Number of Elements per Chip | 7 |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +85 °C |
| Minimum DC Current Gain Range | 500 to 3600 |
| Minimum Operating Temperature | -40 °C |
| Maximum Emitter Base Voltage (V) | 30 |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Collector Current | 500 mA |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (A) | 0.5 |
| Maximum Collector Emitter Saturation Voltage | 1.6 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA |