Транзисторы биполярные (BJTs) IMX9T110
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- Код товара
- 8068340291
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 9 ₽)
Минимальный заказ: 1066 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT DUAL NPN 20V 500MA
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IMX9 |
| Transistor Type | 2 NPN |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Operating Temperature | - |
| Collector Current (Ic) | 500mA |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 300mW |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 2700 |
| Transition Frequency (fT) | 350MHz |
| Gain Bandwidth Product fT: | 350 MHz |
| Emitter- Base Voltage VEBO: | 12 V |
| DC Current Gain (hFE@Ic,Vce) | 560@10mA, 3V |
| Collector- Base Voltage VCBO: | 25 V |
| Continuous Collector Current: | 500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 560 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 180 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 180mV@500mA, 20mA |