Транзисторы биполярные (BJTs) BF820.215
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8050007462
- Бренд
- NXP Semiconductor
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Series
- Automotive, AEC-Q101 ->
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 19 ₽)
Минимальный заказ: 217 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 300В, 50мА, 250мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Series | Automotive, AEC-Q101 -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Pin Count | 3 |
| Вес, г | 1 |
| Power - Max | 250mW |
| RoHS Status | ROHS3 Compliant |
| Package Type | SOT-23 |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | NPN |
| Base Product Number | BF820 -> |
| Operating Temperature | 150В°C (TJ) |
| Frequency - Transition | 60MHz |
| Pd - Power Dissipation | 250mW |
| Minimum DC Current Gain | 50 |
| Supplier Device Package | TO-236AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 mW |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 50mA |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector (Ic) (Max) | 50mA |
| Maximum Collector Base Voltage | 300 V |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | 300 V |
| Collector-Emitter Breakdown Voltage | 300V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Voltage - Collector Emitter Breakdown (Max) | 300V |