Транзисторы биполярные (BJTs) BF771E-6327
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8035961048
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Вес, г
- 0.05
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 82 ₽)
Минимальный заказ: 21 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы SOT-23-3 - BJT ROHS
Технические параметры
| Brand: | Infineon Technologies |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Infineon |
| Package/Case: | SOT-23-3 |
| Product Type: | RF Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SP000010967 BF771E6327XT BF771E6327HTSA1 |
| Product Category: | RF Bipolar Transistors |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 1A |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 2W |
| Pd - Power Dissipation: | 580 mW |
| Transition Frequency (fT) | 125MHz |
| Gain Bandwidth Product fT: | 8000 MHz |
| Emitter- Base Voltage VEBO: | 2 V |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 2V |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | 80 mA |
| Maximum DC Collector Current: | 80 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 70 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@50mA, 500mA |