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Транзисторы биполярные (BJTs) BD441G

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Код товара
8769037028
Бренд
ON Semiconductor***
HTS
8541.29.00.95
Tab
Tab
RoHS
Details
Type
NPN
Цена по запросу
(от 73,77 ₽)
Минимальный заказ: 6 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный транзистор, NPN, 80 В, 4 А, 36Вт

Технические параметры

HTS8541.29.00.95
TabTab
RoHSDetails
TypeNPN
BrandON Semiconductor
Width2.66 mm(Max)
Height11.04 mm(Max)
Length7.74 mm(Max)
SeriesBD441
EU RoHSCompliant
MaterialSi
MilitaryNo
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Вес, г1
PCB changed3
Part StatusActive
ManufacturerON Semiconductor
Package TypeTO-225
Корпусto-126
ConfigurationSingle
Mounting TypeThrough Hole
Package Width2.66(Max)
Mounting StyleThrough Hole
Package / CaseTO-225-3
Package Height11.04(Max)
Package Length7.74(Max)
Transistor TypeNPN
Product CategoryBipolar Power
Supplier PackageTO-225
Transistor PolarityNPN
Factory Pack Quantity500
Pd - Power Dissipation36 W
Minimum DC Current Gain15@2A@1V|40@0.5A@1V|30@3A@1V|15@10mA@5V
Transistor ConfigurationSingle
Gain Bandwidth Product fT3 MHz
Maximum Power Dissipation36 W
Emitter- Base Voltage VEBO5 V
Number of Elements per Chip1
Collector- Base Voltage VCBO80 V
Continuous Collector Current4 A
Maximum DC Collector Current4 A
Maximum Emitter Base Voltage5 V dc
Maximum Operating Temperature+150 C
Minimum Operating Temperature-55 C
DC Collector/Base Gain hfe Min15
Maximum Power Dissipation (mW)36000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Emitter Voltage80 V dc
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)3(Min)
Collector- Emitter Voltage VCEO Max80 V
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector-Emitter Saturation Voltage0.8 V
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2A@2A

Техническая документация