Транзисторы биполярные (BJTs) BCW60D.215
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055424526
- Бренд
- NXP Semiconductor
- ECCN
- EAR99
- HTSUS
- 8541.21.0075
- Series
- Automotive, AEC-Q101 ->
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 54 ₽)
Минимальный заказ: 28 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 32 В 100 мА 250 МГц 250 МВт для поверxностного монтажа TO-236AB
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Series | Automotive, AEC-Q101 -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Pin Count | 3 |
| Вес, г | 0.05 |
| Power - Max | 250mW |
| RoHS Status | ROHS3 Compliant |
| Package Type | SOT-23(TO-236AB) |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | NPN |
| Base Product Number | BCW60 -> |
| Operating Temperature | 150В°C (TJ) |
| Frequency - Transition | 250MHz |
| Pd - Power Dissipation | 250mW |
| Minimum DC Current Gain | 380 |
| Supplier Device Package | TO-236AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 mW |
| Maximum Operating Frequency | 250 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 100mA |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Current - Collector (Ic) (Max) | 100mA |
| Maximum Collector Base Voltage | 32 V |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | 32 V |
| Collector-Emitter Breakdown Voltage | 32V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 32V |