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Транзисторы биполярные (BJTs) BCV26

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Код товара
8055255491
Бренд
NXP Semiconductor
Brand:
Nexperia
Family
Transistors(BJT)-Single
Category
Discrete Semiconductor Products
Packaging
Tape & Reel(TR)
Цена по запросу
(от 4,03 ₽)
Минимальный заказ: 2 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

транз: PNP Darlington 30V 0,5A hоэ 4000-20000, 0,25W, 220Мгц

Технические параметры

Brand:Nexperia
FamilyTransistors(BJT)-Single
CategoryDiscrete Semiconductor Products
PackagingTape & Reel(TR)
Вес, г0.05
Other NamesBCV26/T3
Power - Max250mW
Subcategory:Transistors
Manufacturer:Nexperia
Mounting TypeSurface Mount
Package/Case:SOT-23-3
Product Type:Darlington Transistors
Configuration:Single
Package / CaseSST3(SOT-23-3)
Mounting Style:SMD/SMT
Part # Aliases:933806210215
Transistor TypePNP-Darlington
Standard Package20
Product Category:Darlington Transistors
Transistor Polarity:PNP
Collector Current (Ic)500mA
Factory Pack Quantity:3000
Power Dissipation (Pd)250mW
Frequency - Transistion220MHz
DC Current Gain hFE Max:4000
Transition frequency (fT)220MHz
Emitter- Base Voltage VEBO:10 V
DC current gain (hFE@Vce,Ic)20000@5V, 100mA
Collector- Base Voltage VCBO:40 V
Maximum DC Collector Current:500 mA
Vce Saturation (Max) @ Ib, Ic1V @ 0.1mA, 100mA
Current - Collector (Ic) (Max)500mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
Collector-emitter voltage (Vceo)30V
Maximum Collector Cut-off Current:100 nA
Collector cut-off current (Icbo@Vcb)100nA
Collector- Emitter Voltage VCEO Max:30 V
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)30V
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)1V@100mA, 100uA

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