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Транзисторы биполярные (BJTs) BCP56-16

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Код товара
8001960306
Бренд
DIODES INC.
HTS
8541.29.00.95
Tab
Tab
Type
NPN
EU RoHS
Compliant
Цена по запросу
(от 12,61 ₽)
Минимальный заказ: 2 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный транзистор, NPN, 80 В, 1 А, 2Вт

Технические параметры

HTS8541.29.00.95
TabTab
TypeNPN
EU RoHSCompliant
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingCut Tape(CT)
Pin Count4
AutomotiveNo
Вес, г0.11
PCB changed3
Part StatusActive
Power - Max2W
ManufacturerDiodes Incorporated
ConfigurationSingle Dual Collector
Mounting TypeSurface Mount
Package Width3.5
Package / CaseTO-261-4, TO-261AA
Package Height1.55
Package Length6.5
Transistor TypeNPN
Base Part NumberBCP56
Product CategoryBipolar Power
Supplier PackageSOT-223
Operating Temperature-55В°C ~ 150В°C(TJ)
Frequency - Transition150MHz
Pd - Power Dissipation2W
Minimum DC Current Gain100@150mA@2V|25@500mA@2V|40@150mA@2V|25@5mA@2V
Supplier Device PackageSOT-223
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum DC Collector Current1A
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)1A
Maximum Power Dissipation (mW)2000
Current - Collector Cutoff (Max)100nA(ICBO)
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)150(Min)
Collector-Emitter Breakdown Voltage80V
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Maximum Collector-Emitter Voltage (V)80
Voltage - Collector Emitter Breakdown (Max)80V
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA

Техническая документация