TPW1R005PL.L1Q
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001954810
- Бренд
- Toshiba
- PPAP
- No
- RoHS
- Details
- Brand
- Toshiba
- Width
- 5 mm
Цена по запросу
(от 530 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 45V 300A с 8-контактным разъемом DSOP Advance T/R
Технические параметры
| PPAP | No |
| RoHS | Details |
| Brand | Toshiba |
| Width | 5 mm |
| Height | 0.73 mm |
| Length | 5 mm |
| Series | U-MOSIX-H |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 8 |
| Automotive | No |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Toshiba |
| Configuration | 1 N-Channel |
| Mounting Style | SMD/SMT |
| Package / Case | DSOP-Advance-8 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 122 nC |
| Supplier Package | DSOP Advance |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 5000 |
| Pd - Power Dissipation | 170 W |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 17 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current | 300 A |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 122 |
| Typical Gate Charge @ Vgs (nC) | 59@4.5V|122@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 45 |
| Rds On - Drain-Source Resistance | 1.65 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 300 |
| Typical Input Capacitance @ Vds (pF) | 7700@22.5V |
| Vds - Drain-Source Breakdown Voltage | 45 V |
| Maximum Drain Source Resistance (mOhm) | 0.99@10V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |