TPS1101PWR, Trans MOSFET P-CH Si 15V 2.18A 16-Pin TSSOP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8039082739
- Артикул
- TPS1101PWR
- Бренд
- Texas Instruments
- PPAP
- No
- SVHC
- Yes
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 378 ₽)
Минимальный заказ: 202 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH Si 15V 2.18A с 16-контактным разъемом TSSOP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 16 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Hex Drain Quint Source |
| Package Width | 4.5(Max) |
| Package Length | 5.1(Max) |
| Product Category | Small Signal |
| Supplier Package | TSSOP |
| Process Technology | LinBiCMOS |
| Структура | MOSFET |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 5.5 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 710 |
| Typical Gate Charge @ 10V (nC) | 11.25 |
| Typical Gate Charge @ Vgs (nC) | 11.25@10V |
| Maximum Gate Source Voltage (V) | 2 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Drain Source Voltage (V) | 15 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Gate to Drain Charge (nC) | 2.6 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 1.5 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 2.18 |
| Maximum Drain Source Resistance (mOhm) | 90(Typ)@10V |
| Typical Drain Source Resistance @ 25°C (mOhm) | 134@4.5V|198@3V|232@2.7V|90@10V |
| Максимальное напряжение сток-исток Uси,В | 15 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.18 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |