TPS1100D, Транзистор: P-MOSFET; полевой; -15В; -0,72А; Idm: 7А; SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062552806
- Артикул
- TPS1100D
- Бренд
- Texas Instruments
- Case
- SO8
- Type:
- MOSFET
- Brand:
- Texas Instruments
- Family
- MOSFETs-Single
Цена по запросу
(от 380 ₽)
Минимальный заказ: 161 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
15 В 1,6А 180 Мом при 10 В,1,5А 791 МВт 1.5V@250uA P-канальные SOIC-8 МОП-транзисторов
Технические параметры
| Case | SO8 |
| Type: | MOSFET |
| Brand: | Texas Instruments |
| Family | MOSFETs-Single |
| Series | * |
| Series: | TPS1100 |
| Version | ESD |
| Category | Discrete Semiconductor Products |
| Mounting | SMD |
| Product: | MOSFET Small Signal |
| Packaging | Tape & Reel(TR) |
| Fall Time: | 10 ns |
| Packaging: | Tube |
| Rise Time: | 10 ns |
| Вес, г | 0.09 |
| FET Feature | Standard |
| Gate charge | 5.45nC |
| Other Names | TPS1100DR |
| Power - Max | 791mW |
| Technology: | Si |
| FET Polarity | P-Channel |
| Manufacturer | TEXAS INSTRUMENTS |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -0.72A |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-SOIC(3.9mm Width) |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | SMD/SMT |
| Standard Package | 2.5 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.45 nC |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±15V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.18Ω |
| Drain-source voltage | -15V |
| Pulsed drain current | 7A |
| Transistor Polarity: | P-Channel |
| Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
| Pd - Power Dissipation: | 791 mW |
| Vgs - Gate-Source Voltage: | -15 V, +2 V |
| Typical Turn-On Delay Time: | 4.5 ns |
| Typical Turn-Off Delay Time: | 13 ns |
| Drain to Source Voltage (Vdss) | 15V |
| Id - Continuous Drain Current: | 1.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Forward Transconductance - Min: | 2.5 S |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 15 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Factory Pack Quantity: Factory Pack Quantity: | 75 |